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IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications

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IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications

IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications
IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications

Large Image :  IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IXTT1N250HV
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-268-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

IXTT1N250HV 2500V N-Channel Power MOSFET with 1.5A Continuous Drain Current for Fast Switching Applications

Description
Part Number: IXTT1N250HV FET Type: N-Channel
Drain To Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V Power Dissipation (Max): 250W (Tc)

IXTT1N250HV Integrated Circuit Chip 2500V N-Channel Power MOSFET Transistors TO-268-3
Product Overview

IXTT1N250HV is an N-channel enhancement-mode high-voltage power MOSFET designed specifically for fast-switching applications requiring extremely high breakdown voltages.

Specifications
Parameter Value
Product Category MOSFETs
Technology Si
Mounting Style SMD/SMT
Package / Case D3PAK-3 (TO-268-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 2.5 kV
Id - Continuous Drain Current 1.5 A
Rds On - Drain-Source Resistance 40 Ohms
Vgs - Gate-Source Voltage -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 41 nC
Minimum Operating Temperature -55℃
Maximum Operating Temperature +150℃
Pd - Power Dissipation 250 W
Channel Mode Enhancement
Configuration Single
Fall Time 39 ns
Forward Transconductance - Min 1 mS
Product Type MOSFETs
Rise Time 25 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 132 ns
Typical Turn-On Delay Time 69 ns
Key Features
  • High Blocking Voltage
  • High Voltage Package
  • Fast Intrinsic Diode
  • Low Package Inductance
Applications
  • High Voltage Power Supplies
  • Capacitor Discharge
  • Pulse Circuits
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Frequently Asked Questions
Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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