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IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package

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IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package

IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package
IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package

Large Image :  IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IQE046N08LM5
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TSON-8
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day
Contact Now

IQE046N08LM5 80V Power MOSFET Transistor with 4.6 mOhms RDS(on) and 175 °C Operating Temperature in PG-TSON-8 Package

Description
Part Number: IQE046N08LM5 Package: PG-TSON-8
Operating Temperature Range: -55 °C To 175 °C VGS(th) Range: 1.1 V To 2.3 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V

IQE046N08LM5 Integrated Circuit Chip 80V OptiMOS™ 5 Power MOSFET Transistor In PG-TSON-8 Package
Product Overview

IQE046N08LM5 is a best-in-class OptiMOS™ 5 power MOSFET 80V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry's lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down features a revolutionary flipped silicon die design that provides better thermal capability, higher power density, and improved layout possibilities. Combined with the industrial standard PQFN 3.3x3.3 package, IQE046N08LM5 is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Technical Specifications
Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 99 A
Rds On - Drain-Source Resistance 4.6 mOhms
Vgs - Gate-Source Voltage -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 38 nC
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Pd - Power Dissipation 100 W
Channel Mode Enhancement
Configuration Single
Fall Time 4.4 ns
Forward Transconductance - Min 62 S
Product Type MOSFETs
Rise Time 2.6 ns
Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 5.2 ns
Key Features
  • Logic level allows lower Qrr
  • Reduced RDS(on) by up to 30%
  • Improved RthJC over PQFN
  • Center Gate optimized for paralleling
Product Benefits
  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
Applications
  • Industrial Applications
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Integrated Chips QFN24

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