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Product Details:
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| Part Number: | IDL10G65C5 | Technology: | SiC (Silicon Carbide) Schottky |
|---|---|---|---|
| Voltage - DC Reverse (Vr) (Max): | 650 V | Current - Average Rectified (Io): | 10A |
| Current - Reverse Leakage @ Vr: | 180 µA @ 650 V | Capacitance @ Vr, F: | 300pF @ 1V, 1MHz |
IDL10G65C5 is a 650V, 2A CoolSiC™ (silicon carbide) Schottky diode in a DPAK real2pin package, which achieves a significant improvement in performance through a combination of thin-wafer technology and a proprietary diffusion bonding process.
| Product Category | SiC Schottky Diodes |
|---|---|
| Mounting Style | SMD/SMT |
| Package / Case | VSON-4 |
| Configuration | Single |
| If - Forward Current | 10 A |
| Vrrm - Repetitive Reverse Voltage | 650 V |
| Vf - Forward Voltage | 1.8 V |
| Ifsm - Forward Surge Current | 50 A |
| Ir - Reverse Current | 2 uA |
| Minimum Operating Temperature | -55℃ |
| Maximum Operating Temperature | +150℃ |
| Pd - Power Dissipation | 113 W |
| Part Number | Package |
|---|---|
| CSDM65295TVCQ | QFN-FCMOD-72 |
| TPSM828511RDYR | QFN-FCMOD-9 |
| TPSM828512RDYR | QFN-FCMOD-9 |
| TPSM8287A12BASRDVR | B0QFN-39 |
| TPSM8287A12BBSRDVR | B0QFN-39 |
| TPSM828303APVCBR | QFN-FCMOD-10 |
| TPSM828303ARDSR | QFN-FCMOD-9 |
| TLVM23615RDNR | QFN-FCMOD-11 |
| TPSM560R6HRDAR | B3QFN-15 |
| TPSM831D31MOA | QFM-28 |
| TPSM82823SILR | USIP-10 |
| LMZM33602RLRR | B3QFN-18 |
| LMZM33603RLRR | B3QFN-18 |
| TPSM84424MOLR | QFM-24 |
| TPSM84824MOLR | QFM-24 |
| NXH100B120H3Q0STG | MODULE |
| NXH500B100H7Q2F2SHG | MODULE |
| BCM6719A0KEFBG | BGA |
| BCM4918A0KFBEG | FCBGA |
| BCM67142A0KEFBG | BGA |
| BCM67192A0KEFBG | BGA |
| BCM6772A0KFEBG | BGA |
| BCM6774A0KFEBG | FCBGA |
| BCM6776A0KFEBG | FCBGA |
| BCM68850 | BGA |
| STGD25N36LZAG | TO-252-3 |
| IIS3DWB10IS | LGA-16 |
| CYT6BJ8DDBQ0AEEGS | TQFP-176 |
| CYT6BJ8DDBQ0AESGS | TQFP-176 |
| CYT6BJBDHBQ0BZEGS | PG-LFBGA-272 |
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753