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IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode

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IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode

IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode
IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode

Large Image :  IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IGC016K10S2
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TSON-6
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

IGC016K10S2 100V Normally-Off E-mode GaN Power Transistor with Integrated Schottky Diode

Description
Part Number: IGC016K10S2 Series: CoolGaN™
Drain To Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 NC @ 5 V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Operating Temperature: -40°C ~ 150°C

IGC016K10S2 Integrated Circuit Chip CoolGaN™ Transistor 100V Normally-Off E-mode GaN Power Transistor
Product Overview

IGC016K10S2 is a 100V normally-off e-mode GaN power transistor in a compact 3 x 5 mm package with integrated Schottky diode. This integrated feature minimizes reverse conduction losses and enables higher system efficiencies.

Technical Specifications
Parameter Value
Series CoolGaN™
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2.9V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
Vgs (Max) ±6.5V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 50 V
Power Dissipation (Max) 3.3W (Ta), 45W (Tc)
Operating Temperature -40°C ~ 150°C
Mounting Type Surface Mount
Supplier Device Package PG-TSON-6-2
Package / Case 6-PowerTDFN
Key Features
  • 100 V e-mode power transistor
  • Monolithically integrated Schottky diode
  • Top-side cooled 3x5 mm package
  • High power capability
  • No reverse recovery charge
  • Ultra-low gate and output charge
  • Qualified according to JEDEC
  • Ultrafast switching
  • Low reverse conduction voltage
  • Exposed die for thermal excellence
  • Moisture rating MSL1
Applications
  • Data center power solutions
  • Intermediate Bus Converter (IBC)
  • Telecommunications infrastructure
  • Robotics
  • Motor control
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Frequently Asked Questions
Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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