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SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip

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SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip

SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip
SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip

Large Image :  SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: SIR680ADP
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PowerPAK SO-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

SIR680ADP 80V 125A N-Channel Power MOSFET with TrenchFET Gen IV Technology Integrated Circuit Chip

Description
Part Number: SIR680ADP Series: TrenchFET® Gen IV
Drain To Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 83 NC @ 10 V Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Highlight:

80V Drain-Source Voltage Power MOSFET

,

125A Continuous Drain Current N-Channel Transistor

,

TrenchFET Gen IV Technology Integrated Circuit Chip

SIR680 Integrated Circuit Chip 80V TrenchFET Gen IV N-Channel Power MOSFET Transistors
Product Description Of SIR680

SIR680 is an N-channel power MOSFET utilizing TrenchFET® Gen IV technology. It is housed in a PowerPAK® SO-8 package and is specifically designed for power conversion applications requiring high efficiency.

Specifications Of SIR680
Parameter Value
Product Category MOSFETs
Technology Si
Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 125 A
Rds On - Drain-Source Resistance 2.88 mOhms
Vgs - Gate-Source Voltage -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 43 nC, 55 nC
Minimum Operating Temperature -55℃
Maximum Operating Temperature +150℃
Pd - Power Dissipation 104 W
Key Features Of SIR680
  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100% Rg and UIS tested
Applications Of SIR680
  • Synchronous rectification
  • Primary side switch
  • DC/DC converters
  • OR-ing
  • Power supplies
  • Motor drive control
  • Battery and load switch
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SIT92114AI DFN-8
SIT92184AA DFN-8
SIT91211 QFN-24
SIT8924BA PQFN-4
SIT8944BA PQFN-4
SIT5503AC CQFN-10
SIT9121AI SMD-6
SIT8944BM PQFN-4
SIT9346AI SMD-6
SIT8944BI PQFN-4
SIT5541AE CQFN-10
SIT5346AI CQFN-10
SIT7601AA PQFN-4
SIT8209AI PQFN-4
Tags: SIR680ADP, SIR680AD, SIR680A, SIR680
Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

Send your inquiry directly to us (0 / 3000)

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