CMPA601C025F GaN IC GaN MMIC 40W 25dB Gain 6 GHz to 12 GHz Gallium Nitride HEMT MMIC Power Amplifier

CMPA601 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, utilizing a 0.25-μm gate-length fabrication process. GaN on SiC offers superior properties compared to silicon, gallium arsenide, or GaN on Si, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also provide greater power density and wider bandwidths compared to Si, GaAs, and GaN on Si transistors. This MMIC features a reactively matched amplifier design approach enabling very wide bandwidths.

• 34 dB Small Signal Gain
• 40 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.172 x 0.239 x 0.004 inches

• Broadband Amplifiers
• Radar Amplifiers
• Test Equipment Amplifiers
• Jamming Amplifiers