HMC349AMS8GE GaAs SPDT Switch Integrated Circuit Chip 100MHz to 4GHz High Isolation Nonreflective Design

HMC349 is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

HMC349 is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.

HMC349 operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.

HMC349 comes in an 8-lead mini small outline package with an exposed pad.

• Nonreflective, 50 Ω design
• High isolation: 57 dB to 2 GHz
• Low insertion loss: 0.9 dB to 2 GHz
• High input linearity
• 1 dB power compression (P1dB): 34 dBm typical
• Third-order intercept (IP3): 52 dBm typical
• High power handling
• 33.5 dBm through path
• 26.5 dBm terminated path
• Single positive supply: 3 V to 5 V
• CMOS-/TTL-compatible control
• All off state control
• 8-lead mini small outline package with exposed pad (MINI_SO_EP)

• Cellular/4G infrastructure
• Wireless infrastructure
• Mobile radios
• Test equipment