IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Name: IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IKW30N60H3
Price: Negotiable USD
Availability: InStock

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IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Large Image : IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IKW30N60H3

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-247-3
Delivery Time:	3-5 work days
Payment Terms:	TT
Supply Ability:	10000 Pieces per Day

Contact Now

IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Description

Part Number:	IKW30N60H3	Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A	Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 30A	Power - Max:	187 W
Highlight:	600V IGBT Transistor , 30A Integrated Circuit Chip , Anti-Parallel Diode High Speed IGBT

IKW30N60H3 Integrated Circuit Chip 600V 30A High Speed IGBT Transistors With Anti-Parallel Diode

Product Overview Of IKW30N60H3

IKW30N60H3 is a high-speed 600V, 30A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package. This component provides the optimal balance between switching and conduction losses, featuring MOSFET-like turn-off switching behavior that results in low turn-off losses.

Specifications Of IKW30N60H3

Parameter	Value
Collector-Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.95 V
Maximum Gate Emitter Voltage	-20 V, 20 V
Continuous Collector Current at 25°C	60 A
Pd - Power Dissipation	187 W
Minimum Operating Temperature	-40°C
Maximum Operating Temperature	+175°C
Gate-Emitter Leakage Current	100 nA
Unit Weight	6.500 g

Key Features Of IKW30N60H3

Low switching losses
Excellent Vce(sat) behavior
Fast switching behavior
Low EMI emissions
Optimized diode for target applications
Low gate resistor selection possible
Excellent switching behaviour
Short circuit capability 5µs
Offering Tj(max) of 175°C
Packaged with & without free-wheeling diode

Performance Benefits Of IKW30N60H3

Low switching and conduction losses
Very good EMI behavior
Best-in-class 600 V IGBT efficiency
High current density

Applications Of IKW30N60H3

Washing and drying systems
Commercial HVAC systems
Residential air conditioning

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

IKW30N60H3 600V 30A High Speed IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

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