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IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip

IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip
IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip

Large Image :  IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IRF530NPBF
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-220-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

IRF530NPBF 100V 17A Fast Switching N-Channel MOSFET Transistor HEXFET® Power MOSFET Integrated Circuit Chip

Description
Part Number: IRF530NPBF Series: HEXFET®
Drain To Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 37 NC @ 10 V Power Dissipation (Max): 70W (Tc)
Highlight:

100V MOSFET Transistor

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17A Continuous Drain Current HEXFET® Power MOSFET

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Fast Switching Integrated Circuit Chip

IRF530 Integrated Circuit Chip 100V Single N-Channel MOSFET Transistor TO-220-3
Product Description Of IRF530

IRF530 is an N-channel power MOSFET belonging to the well-known HEXFET® power MOSFET series. This device is housed in a TO-220AB package and is renowned for its low on-resistance, fast switching and high reliability.

Specification Of IRF530
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 24.7 nC
Minimum Operating Temperature: -55℃
Maximum Operating Temperature: +175℃
Pd - Power Dissipation: 79 W
Features Of IRF530
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard through-hole power
  • High-current rating
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Tags
IRF530NPBF IRF530NPB IRF530NP IRF530N IRF530
Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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