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IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current

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IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current

IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current
IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current

Large Image :  IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IPP65R190CFD
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-220-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Supply Ability: 10000 Pieces per Day
Contact Now

IPP65R190CFD 650V CoolMOS™ N-Channel Power MOSFET with 190mOhm Rds On and 14A Continuous Drain Current

Description
Part Number: IPP65R190CFD Drain To Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 320µA Power Dissipation: 77W (Tc)
Highlight:

650V Power MOSFET

,

190mOhm Integrated Circuit Chip

,

14A CoolMOS™ N-Channel

IPP65R190CFD Integrated Circuit Chip 650V CoolMOS™ N-Channel Power MOSFET Transistors
Product Overview Of IPP65R190

IPP65R190 is a 650V CoolMOS™ CFD2 N-Channel Power MOSFET transistor from Infineon. This second-generation high-voltage MOSFET features an integrated fast body diode, offering improved energy efficiency and superior EMI behavior compared to competitor parts.

Specifications Of IPP65R190
Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 190 mOhms
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 4.5 V
Qg - Gate Charge 23 nC
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Pd - Power Dissipation 63 W
Key Features Of IPP65R190
  • 650V with integrated fast body diode
  • Low voltage overshoot in hard switching
  • Significant QG reduction
  • Tighter RDS(on)max to RDS(on)typ window
  • Easy to design-in
Performance Benefits Of IPP65R190
  • Low switching losses due to low Qrr
  • Self-limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn off delay times
  • Outstanding CoolMOS™ quality
Applications Of IPP65R190
  • Intermediate Bus Converter (IBC)
  • DIN rail power supply solutions
  • Uninterruptible power supplies (UPS)
Product Tags

IPP65R190CFD, IPP65R190CF, IPP65R190C, IPP65R190

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Frequently Asked Questions
Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q: Which Certificates do you have?

A: We are ISO 9001:2015 Certified Company and member of ERAI.

Q: Can you support small quantity order or sample? Is the sample free?

A: Yes, we support sample order and small order. Sample cost is different according to your order or project.

Q: How to ship my order? Is it safe?

A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Integrated Circuit Chip 24-PQFN,

TUSB1002ARGER Dual Channel Linear,

Integrated Chips QFN24

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