BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

Name: BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: BLF8G22LS-270GV
Price: Negotiable USD
Availability: InStock

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BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

Large Image : BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	BLF8G22LS-270GV

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	MODULE
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union
Supply Ability:	10000 Pieces per Day

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BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

Description

Part Number:	BLF8G22LS-270GV	Technology:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz	Gain:	17.3dB
Voltage - Test:	28 V	Current - Test:	2.4 A
Highlight:	270W Power Integrated Circuit Chip , 28V Voltage LDMOS Transistor , 2.11GHz ~ 2.17GHz Frequency RF Power Transistor

BLF8G22 Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistors

Product Overview Of BLF8G22

BLF8G22 is 270W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

Specifications Of BLF8G22

Technology	LDMOS
Frequency	2.11GHz ~ 2.17GHz
Gain	17.3dB
Voltage - Test	28 V
Current - Test	2.4 A
Power - Output	80W
Voltage - Rated	65 V
Mounting Type	Chassis Mount
Package / Case	SOT-1244C
Supplier Device Package	CDFM6

Key Features Of BLF8G22

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection

Applications Of BLF8G22

RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range

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Product Tags

BLF8G22LS-270GV BLF8G22LS-270G BLF8G22LS-270 BLF8G22LS-27 BLF8G22LS-2 BLF8G22LS BLF8G22L BLF8G22

Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

BLF8G22LS-270GV Integrated Circuit Chip 270W Power LDMOS Transistor 28V RF Power Transistor 2.11GHz ~ 2.17GHz

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