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IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications

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IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications

IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications
IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications

Large Image :  IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IRLB3813
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-220-3
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day
Contact Now

IRLB3813 30V 260A 1.95mOhm Power MOSFET StrongIRFET Transistor for High Current Applications

Description
Part Number: IRLB3813 Drain To Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA
Highlight:

30V Power MOSFET

,

260A MOSFET Transistor

,

1.95mOhm StrongIRFET

IRLB3813 Integrated Circuit Chip 30V Single N-Channel StrongIRFET™ Power MOSFET Transistors
Product Overview Of IRLB3813

IRLB3813 is a 30V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package.

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low frequency applications requiring performance and ruggedness, addressing applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications Of IRLB3813
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 260 A
Rds On - Drain-Source Resistance 1.95 mOhms
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 1.9 V
Qg - Gate Charge 86 nC
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Pd - Power Dissipation 230 W
Fall Time 60 ns
Forward Transconductance - Min 140 S
Product Type MOSFETs
Rise Time 170 ns
Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 36 ns
Unit Weight 2 g
Key Features Of IRLB3813
  • Industry standard through-hole package
  • High-current rating
  • JEDEC standard Product qualification
  • 100kHz Silicon switching applications
  • Softer body-diode vs previous generation
  • Wide portfolio available
Product Benefits Of IRLB3813
  • Drop-in replacement with standard pinout
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance, low-frequency
  • Increased power density
  • Flexibility for optimal device selection
Applications Of IRLB3813
  • Optimized for UPS/Inverter Applications
  • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
  • Power Tools
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Frequently Asked Questions
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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