IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Name: IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IKW25N120T2
Price: Negotiable USD
Availability: InStock

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IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Large Image : IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IKW25N120T2

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-247-3
Delivery Time:	3-5 work days
Payment Terms:	T/T
Supply Ability:	10000 Pieces per Day

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IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

Description

Part Number:	IKW25N120T2	Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	50 A	Current - Collector Pulsed (Icm):	100 A
Power - Max:	349 W	Switching Energy:	2.9mJ
Highlight:	1200V IGBT Transistor , 25A Integrated Circuit Chip , Anti-Parallel Diode Discrete IGBT

IKW25N120T2 Integrated Circuit Chip 1200V 25A IGBT Transistors With Anti-Parallel Diode

Product Overview Of IKW25N120T2

IKW25N120T2 is a 1200V, 25A IGBT discrete with anti-parallel diode in TO-247-3 package. This TRENCHSTOP™ IGBT4 device combines trench-cell and fieldstop technology for significant improvements in both static and dynamic performance. The integration with a soft recovery emitter controlled diode further minimizes turn-on losses, achieving optimal efficiency through the best compromise between switching and conduction losses.

Specifications Of IKW25N120T2

Configuration	Single
Collector-Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.7 V
Maximum Gate Emitter Voltage	-20 V, 20 V
Continuous Collector Current at 25°C	50 A
Power Dissipation	349 W
Minimum Operating Temperature	-40°C
Maximum Operating Temperature	+175°C
Gate-Emitter Leakage Current	200 nA
Unit Weight	38 g

Key Features Of IKW25N120T2

Lowest VCEsat drop
Low switching losses
Positive temperature coefficient in VCEsat
Easy parallel switching capability
Very soft, fast recovery diode
High ruggedness
Temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution

Applications Of IKW25N120T2

Home appliances
Motor control
Uninterruptible power supplies (UPS)

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Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

IKW25N120T2 1200V 25A IGBT Transistor with Anti-Parallel Diode Integrated Circuit Chip

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