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IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip

IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip
IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip

Large Image :  IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IXTH200N10T
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Supply Ability: 10000 Pieces per Day

IXTH200N10T 100V 200A N-Channel Power MOSFET Trench Gate MOSFET TO-247-3 Integrated Circuit Chip

Description
Part Number: IXTH200N10T FET Type: N-Channel
Drain To Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400 PF @ 25 V Power Dissipation (Max): 550W (Tc)
Highlight:

100V Power MOSFET

,

200A N-Channel MOSFET

,

TO-247-3 Trench Gate MOSFET

IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3

 

Product Overview Of IXTH200

The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.

Specifications Of IXTH200
Product Category MOSFETs
Technology Si
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 100 V
Id – Continuous Drain Current 200 A
Rds On – Drain-Source Resistance 5.5 mΩ
Minimum Operating Temperature −55 °C
Maximum Operating Temperature +175 °C
Pd – Power Dissipation 550 W
Channel Mode Enhancement
Tradename HiPerFET
Fall Time 34 ns
Product Type MOSFETs
Rise Time 31 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 35 ns
Key Features Of IXTH200
  • 175 °C operating temperature
  • Low RDS(ON)
  • Avalanche rated
  • High current handling capability
  • Fast intrinsic rectifier
Applications Of IXTH200
  • Automotive
    • Motor drives
    • High-side switch
    • 12V battery
    • ABS systems
  • DC/DC converters and off-line UPS
    • Primary-side switch
  • High current switching applications
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Tags

Related tags: IXTH200N10T, IXTH200N10, IXTH200N1, IXTH200N, IXTH200

Frequently Asked Questions
Q: Are your products original?

A: Yes, all products are original. New original imports are our purpose.

Q: Which certificates do you have?

A: We are an ISO 9001:2015 certified company and a member of ERAI.

Q: Can you support small quantity orders or samples? Is the sample free?

A: Yes, we support sample orders and small orders. Sample cost varies depending on your order or project.

Q: How do you ship my order? Is it safe?

A: We ship via express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are well packed to ensure safety, and we are responsible for any product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If items are not in stock, we will confirm the lead time based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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