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IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors

IXFN60N80P Integrated Circuit Chip N-Channel  Enhancement Mode 800V 53A Power MOSFET Transistors
IXFN60N80P Integrated Circuit Chip N-Channel  Enhancement Mode 800V 53A Power MOSFET Transistors

Large Image :  IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IXFN60N80P
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: SOT-227-4
Delivery Time: 3-5 work days
Payment Terms: T/T
Supply Ability: 10000 Pieces per Day

IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors

Description
Part Number: IXFN60N80P Drain To Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA
Highlight:

800V Power MOSFET Transistor

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53A N-Channel MOSFET

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N-Channel Enhancement Mode Power MOSFET

IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors

Product Overview Of IXFN60N80P

The IXFN60N80P is an N-Channel Enhancement Mode 800V, 53A Power MOSFET Transistor. Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridge motor control and uninterruptible power supply (UPS) applications. This family of HiPerFETs provides the lowest RDS(on), low RthJC, low Qg, and enhanced dv/dt capability.

Specifications Of IXFN60N80P
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds — Drain-Source Breakdown Voltage 800 V
Id — Continuous Drain Current 53 A
Rds(on) — Drain-Source Resistance 140 mΩ
Vgs — Gate-Source Voltage −30 V, +30 V
Minimum Operating Temperature −55 °C
Maximum Operating Temperature +150 °C
Pd — Power Dissipation 1.04 mW
Configuration Single
Fall Time 26 ns
Rise Time 29 ns
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 36 ns
Height 9.6 mm
Length 38.23 mm
Width 25.42 mm
Unit Weight 30 g
Key Features Of IXFN60N80P
  • International standard packages
  • Dynamic dv/dt rating
  • Avalanche rated
  • Fast intrinsic rectifier
  • Low QG and RDS(on)
  • Low drain-to-tab capacitance
  • Low package inductance
Advantages Of IXFN60N80P
  • High power density
  • Easy to mount
  • Space savings
Applications Of IXFN60N80P
  • Switch-mode and resonant-mode power supplies
  • DC-DC converters
  • Battery chargers
  • Uninterruptible power supplies (UPS)
  • AC motor drives
  • High-speed power switching applications
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Frequently Asked Questions

Q: Are your products original?

A: Yes, all products are original. New original import is our purpose.

Q: Which certificates do you have?

A: We are an ISO 9001:2015 Certified Company and a member of ERAI.

Q: Can you support small quantity orders or samples? Is the sample free?

A: Yes, we support sample orders and small orders. Sample cost varies depending on your order or project.

Q: How do you ship my order? Is it safe?

A: We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are well packed to ensure safety, and we are responsible for any product damage to your order.

Q: What about the lead time?

A: We can ship stock parts within 5 working days. If items are not in stock, we will confirm the lead time based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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