Part Number:IMBG65R163M1HXTMA1
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:217mOhm @ 5.7A, 18V
Part Number:IPT020N10N5ATMA1
Power Dissipation (Max):273W (Tc)
FET Type:N-Channel
Part Number:BSZ050N03LSGATMA1
Pd - Power Dissipation:50 W
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Part Number:SCT3040KW7TL
Pd - Power Dissipation:267 W
Channel Mode:Enhancement
Part Number:SCT4018KEC11
Technology:SiC
Mounting Style:Through Hole
Part Number:SCTWA35N65G2V
FET Type:N-Channel
Power Dissipation:208W (Tc)
Part Number:SCTWA60N120G2-4
Drain-Source Breakdown Voltage:1.2 kV
Continuous Drain Current:60 A
Part Number:NTH4L040N120SC1
Power Dissipation (Max):319W (Tc)
Mounting Type:Through Hole
Part Number:SCTW90N65G2V
Rds On:25 mOhms
Gate-Source Threshold Voltage:1.9 V
Part Number:SCT055HU65G3AG
Fall Time:12.1 ns
Rise Time:7.9 ns
Part Number:SCTL35N65G2V
Unit Weight:180 mg
Rise Time:1ns
Part Number:SCT3080KRHRC15
RDS(on) (Typ.):80mΩ
Power Dissipation:165W