China Integrated Circuit Chip

Integrated Circuit Chip SCTH40N120G2V-7 N-Channel Surface Mount Transistors

Part Number:SCTH40N120G2V-7

Operating Temperature:-55°C ~ 175°C (TJ)

Vgs th - Gate-Source Threshold Voltage:5 V
Integrated Circuit Chip SCTH35N65G2V-7AG Surface Mount 650V 45A Transistors

Part Number:SCTH35N65G2V-7AG

Channel Mode:Enhancement

Configuration:Single
Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors

Part Number:SCTH35N65G2V-7

Vdss:650 V

Drive Voltage:18V, 20V
Integrated Circuit Chip TW140N120C,S1F Single FETs Transistors TO-247-3 N-Channel

Part Number:TW140N120C,S1F

Vds - Drain-Source Breakdown Voltage:1.2 kV

Mounting Style:Through Hole
Electronic Integrated Circuits SCTW35N65G2VAG N-Channel Transistors Through Hole

Part Number:SCTW35N65G2VAG

Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V

Operating Temperature:-55°C ~ 200°C (TJ)
N-Channel Silicon Carbide Transistors TW083N65C,S1F Integrated Circuit Chip TO-247-3

Part Number:TW083N65C,S1F

Product Category:MOSFET

Qg - Gate Charge:21 nC
Integrated Circuit Chip SCT20N120AG N-Channel 153W Transistors Through Hole

Part Number:SCT20N120AG

Rds On (Max) @ Id, Vgs:239mOhm @ 10A, 20V

Vgs (Max):+25V, -10V
Integrated Circuit Chip TW060N120C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

Part Number:TW060N120C,S1F

Gate Charge (Qg) (Max) @ Vgs:46 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 800 V
1200V 91A Single MOSFETs Transistors SCTW70N120G2V Integrated Circuit Chip

Part Number:SCTW70N120G2V

Gate-Source Threshold Voltage:4.9 V

Qg - Gate Charge:150 nC
Integrated Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors

Part Number:SCT30N120H

Technology:SiCFET (Silicon Carbide)

Drive Voltage:20V
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

Part Number:SCTWA50N120

Rds On - Drain-Source Resistance:52 mOhms

Vgs - Gate-Source Voltage:- 10 V, + 25 V
8-PowerVDFN SCTL90N65G2V MOSFET Silicon Carbide Power MOSFET 650V 18mOhm Typ 40 A

Part Number:SCTL90N65G2V

Technology:SiC

Transistor Polarity:N-Channel

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China Integrated Circuit Chip

Integrated Circuit Chip SCTH40N120G2V-7 N-Channel Surface Mount Transistors

Integrated Circuit Chip SCTH35N65G2V-7AG Surface Mount 650V 45A Transistors

Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors

Integrated Circuit Chip TW140N120C,S1F Single FETs Transistors TO-247-3 N-Channel

Electronic Integrated Circuits SCTW35N65G2VAG N-Channel Transistors Through Hole

N-Channel Silicon Carbide Transistors TW083N65C,S1F Integrated Circuit Chip TO-247-3

Integrated Circuit Chip SCT20N120AG N-Channel 153W Transistors Through Hole

Integrated Circuit Chip TW060N120C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

1200V 91A Single MOSFETs Transistors SCTW70N120G2V Integrated Circuit Chip

Integrated Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

8-PowerVDFN SCTL90N65G2V MOSFET Silicon Carbide Power MOSFET 650V 18mOhm Typ 40 A

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