Part Number:IMZ120R350M1H
Benchmark gate threshold voltage:VGS(th) = 4.5V
Tvj,max:175°C
Part Number:IMW65R030M1H
Driving voltage:18V
Channel Mode:Enhancement
Part Number:IMBG65R039M1H
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Rds On (Max) @ Id, Vgs:51mOhm @ 25A, 18V
Part Number:IMBG65R048M1H
Peak drain current(Max):99A
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 18 V
Part Number:IMBF170R450M1
Product Status:Active
FET Type:N-Channel
Part Number:IMYH200R012M1H
Series:CoolSiC™
Vgs (Max):+20V, -7V
Part Number:AM5729BABCXA
Speed:1.5GHz
Cores:7
Part Number:MSC060SMA070B4
Vgs th - Gate-Source Threshold Voltage:1.9V
Qg - Gate Charge:56 nC
Part Number:MSC400SMA330
Continuous Drain Current:11 A
Gate-Source Threshold Voltage:2.97 V
Part Number:MSC180SMA120
Gate Charge:34 nC @ 20 V
Rds On:225mOhm @ 8A, 20V
Part Number:MSC050SDA120B
Forward voltage(IF = 50 A, TJ = 25 °C) - Max:1.8V
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 50 A
Part Number:MSC015SMA070
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)