Part Number:MSC090SMA070B
Transistor Polarity:N-Channel
Qg - Gate Charge:38 nC
Part Number:MSC080SMA120S
Rds On:100 mOhms
Minimum Operating Temperature:- 55 C
Part Number:MSC080SMA120B
Drain-Source Breakdown Voltage:1.2 kV
Configuration:Single
Part Number:MSC750SMA170B4
Technology:SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On):20V
Part Number:MSC750SMA170S
Number of Channels:1 Channel
Rds On - Drain-Source Resistance:750 mOhms
Part Number:MSC040SMA120J
Rds On (Max) @ Id, Vgs:50mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 1000 V
Part Number:MSC017SMA120B
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:5280 pF @ 1000 V
Part Number:MSC040SMA120S
Operating Temperature:-55°C ~ 175°C (TJ)
Id - Continuous Drain Current:64 A
Part Number:MSC017SMA120S
Power Dissipation (Max):357W (Tc)
Supplier Device Package:D3PAK
Part Number:MSC017SMA120J
Minimum Operating Temperature:- 55 C
Pd - Power Dissipation:278 W
Part Number:MSC180SMA120S
Vgs (Max):+23V, -10V
Rds On (Max) @ Id, Vgs:225mOhm @ 8A, 20V
Part Number:MSC025SMA120B
Product Status:Active
FET Type:N-Channel