Part Number:IXTP160N10T
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Part Number:BSC026N08NS5
Technology:Si
Transistor Polarity:N-Channel
Part Number:IPB100N04S4-H2
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Part Number:IPDD60R050G7
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Part Number:IPB042N10N3G
Series:OptiMOS™
FET Type:N-Channel
Part Number:IPP051N15N5
Height:15.65 mm
Length:10 mm
Part Number:SPA11N80C3
Vds - Drain-Source Breakdown Voltage::800 V
Id - Continuous Drain Current::11 A
Part Number:IAUT165N08S5N029
Transistor Polarity::N-Channel
Number of Channels::1 Channel
Part Number:IRFH5215TRPBF
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:150 V
Part Number:IPB60R045P7
Operating Temperature:-55 °C - 150 °C
Package:PG-TO263-3
Part Number:IPA60R099P7
Operating Temperature:-55 °C - 150 °C
Package:PG-TO220-3
Part Number:SPD06N80C3
Vds - Drain-Source Breakdown Voltage::800 V
Id - Continuous Drain Current::6 A