Part Number:NTH4L027N65S3F
Mounting Style:Through Hole
Transistor Polarity:N-Channel
Part Number:NVMFS5C612NWFT1G
Continuous Drain Current:225 A
Gate−to−Source Voltage:±20 V
Part Number:IXYX110N120B4
Maximum Gate Emitter Voltage:- 20 V, 20 V
Continuous Collector Current at 25 C:340 A
Part Number:IXYH55N120C4
Collector- Emitter Voltage VCEO Max:1.2 kV
Collector-Emitter Saturation Voltage:2.5 V
Part Number:IXYH85N120C4
Weight:6 g
Operating Temperature:-55°C ~ 175°C (TJ)
Part Number:IXYX110N120A4
Test Condition:600V, 50A, 1.5Ohm, 15V
Supplier Device Package:TO-247 (IXTH)
Part Number:IXYA20N120B4HV
Package / Case:TO-263HV-3
Series:GenX4™, XPT™
Part Number:IXYH55N120A4
IGBT Type:PT
Product Status:Active
Part Number:IXYA20N120A4HV
Unit Weight:2.500 g
Input Type:Standard
Part Number:IXYH16N250CV1HV
Gate Input Resistance:5.8Ω
Clamped Inductive Load:1500V
Part Number:IXXX140N65B4H1
Product Type:IGBT Transistors
Pd - Power Dissipation:1.2 kW
Part Number:IXBT14N300HV
Pd - Power Dissipation:200 W
Technology:Si