Part Number:SCT3030KLHRC11
Drain-Source Breakdown Voltage:1.2 kV
Gate-Source Threshold Voltage:2.7 V
Part Number:SCT3022ALHRC11
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 18 V
Technology:SiCFET (Silicon Carbide)
Part Number:SCT3105KLHRC11
Power Dissipation:134W
Vgs(th) (Max) @ Id:5.6V @ 3.81mA
Part Number:SCT3017ALHRC11
Unit Weight:6 g
Typical Turn-Off Delay Time:64 ns
Part Number:SCT3080KW7TL
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:785 pF @ 800 V
Part Number:SCT3105KW7TL
Maximum Operating Temperature:+ 175 C
Qg - Gate Charge:51 nC
Part Number:SCT3080AW7TL
Transistor Polarity:N-Channel
Id - Continuous Drain Current:29 A
Part Number:SCT2450KEHRC11
Package / Case:TO-247-3
Series:Automotive, AEC-Q101
Part Number:SCT3080KLHRC11
Channel Mode:Enhancement
Fall Time:24 ns
Part Number:SCT3120ALHRC11
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 500 V
Power Dissipation:103W
Part Number:SCT2750NYTB
Fall Time:63 ns
Forward Transconductance(Min):600 mS
Part Number:SCT3030KLGC11
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C