Part Number:IMW120R014M1H
Vgs - Gate-Source Voltage:- 10 V, + 23 V
Qg - Gate Charge:110 nC
Part Number:IMYH200R075M1H
Mounting Style:Through Hole
Package / Case:PG-TO247-4
Part Number:IMBG65R083M1H
Technology:SiCFET (Silicon Carbide)
Drive Voltage:18V
Part Number:IMZA65R027M1H
Input Capacitance (Ciss) (Max) @ Vds:2131 pF @ 400 V
Series:CoolSiC™
Part Number:IMBG65R030M1H
Channels:1
Vds:650 V
Part Number:IMBG65R107M1H
Driving voltage:0V-18V
Lower switching losses:4 times
Part Number:IMZ120R140M1H
Rds On (Max) @ Id, Vgs:182mOhm @ 6A, 18V
Power Dissipation (Max):94W (Tc)
Part Number:IMBG120R090M1H
Qg - Gate Charge:23 nC
Rds On - Drain-Source Resistance:125 mOhms
Part Number:215-130000026
Commissioning Port:JTAG
Operation Temperature(Min):-40°C
Part Number:CY8C6144AZI-S4F92
Data Bus Width:32 bit
Maximum Clock Frequency:150 MHz
Part Number:ICE3BR0665JZ
Voltage - Breakdown:650V
Internally fixed switching frequency:65kHz
Part Number:TRF37B32IRTVR
NF - Noise Figure:9.2 dB
LO Frequency:2900 MHz