Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Part Number:SCT4026DW7TL
Technology:SiCFET (Silicon Carbide)
Package / Case:TO-263-7L
Part Number:SCT2280KEHRC11
Drain to Source Voltage (Vdss):1200 V
Drive Voltage (Max Rds On, Min Rds On):18V
Part Number:SCT2280KEHRC11
Body diode pulsed forward current:43A
Gate - source voltage (DC):-4V to +21V
Part Number:SCT4036KEC11
Drain - source voltage:1200V
Pulsed drain current:84A
Part Number:SCT4062KRC15
Qg - Gate Charge:64 nC
Vgs (Max):+21V, -4V
Part Number:SCT4018KW7TL
Technology:SiCFET (Silicon Carbide)
Rds On:18 mOhms
Part Number:SCT4018KRC15
RDS(on) (Typ.):18mΩ
FET Type:N-Channel
Part Number:SCT4026DEC11
RDS(on) (Typ.):26mΩ
Range of storage temperature:-40°C to +175°C