Part Number:FF8MR12W2M1B11BOMA1
IDRM:300A
COSS stored energy:264 µJ
Part Number:FS3L200R10W3S7FB94BPSA1
Implemented drain current:15A
Input:Standard
Part Number:FF6MR12W2M1PB11BPSA1
Drain-source voltage(Tvj = 25°C ):1200V
Gate-source voltage:-10 V / 20 V
Part Number:FS300R17OE4B81BPSA1
Voltage - Collector Emitter Breakdown:1700 V
Current - Collector:300 A
Part Number:FF23MR12W1M1B11BOMA1
Mounting Type:Chassis Mount
Rated resistance(TNTC = 25°C) Typ:5,00 kΩ
Part Number:FS55MR12W1M1HB11NPSA1
Technology:Silicon Carbide (SiC)
Configuration:6 N-Channel (Full Bridge)
Part Number:FF6MR12KM1PHOSA1
ID nom:250A
Technology:Silicon Carbide (SiC)
Part Number:FP75R12N3T7BPSA1
VCES:1200 V
Overload operation:175°C
Part Number:FF3MR12KM1HOSA1
Drain to Source Voltage (Vdss):1200V (1.2kV)
Operating Temperature(Min):-40°C (TJ)
Part Number:FP15R12KE3GBPSA1
Module lead resistance:2.5mΩ
Storage temperature:-40 - 125 °C
Part Number:FP75R12N2T4BPSA1
Rds On (Max) @ Id, Vgs:2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds:39700pF @ 800V
Part Number:FP75R12N2T7BPSA2
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.55 V