Part Number:MT29F2G08ABAGAWP-IT:G
Timing Type:Asynchronous
Voltage - Supply(Min):2.7V
Part Number:MT29F4G08ABBFAH4-AAT:F
Erase block:2ms (TYP)
Size:9mm × 11mm × 1.0mm
Part Number:MT29F8G08ADAFAWP-AAT:F
Memory Organization:1G x 8
Device size:8Gb: 8,192 blocks
Part Number:MT29F2G08ABAGAH4-ITE:G
Package / Case:VFBGA-63
Memory Size:2 Gbit
Part Number:MT29F8G08ADAFAWP-AIT:F
Organization:1 G x 8
Memory Type:Non-Volatile
Part Number:MT29F4G01ABAFD12-AAT:F
FBGA Code:NW931
Op. Temp.:-40C to +105C
Part Number:MT35XU01GBBA1G12-0SIT
Sector erase uniform granularity:128KB
Subsector erase:4KB
Part Number:MT29F1G08ABBFAH4-ITE:F
Timing Type:Asynchronous
Density:1Gb
Part Number:MT29F4G08ABADAWP-AATX:D
Supply Current - Max:35 mA
Data Bus Width:8 bit
Part Number:MT29F2G08ABBEAH4-AITX:E
Product Type:NAND Flash Memory
Organization:256 M x 8
Part Number:MT29F2G16ABBGAH4-AIT:G
Timing Type:Asynchronous
Supply Voltage - Max:1.95 V
Part Number:MT29F4G16ABBFAH4-AAT:F
Density:4Gb
FBGA Code:NX100