Introducing the STGW80H65DFB Integrated Circuit Chip, a high-speed HB series IGBT transistor. With a collector-emitter breakdown voltage of 650V and a maximum current of 120A, it ensures optimal efficiency with low conduction and switching losses. This RoHS-compliant component is ideal for photovoltaic inverters and high-frequency converters. Elevate your projects with cutting-edge technology! Welcome to visit our website!