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Infineon CYEL18V2562-200BKXE Radiation Tolerant High Bandwidth Pseudostatic RAM Memory
Latest company news about Infineon CYEL18V2562-200BKXE Radiation Tolerant High Bandwidth Pseudostatic RAM Memory

Shenzhen Mingjiada Electronics Co., Ltd. supplies and recycles Infineon CYEL18V2562-200BKXE radiation-hardened, high-bandwidth pseudo-static random-access memory.

 

I. Product Overview

The CYEL18V2562-200BKXE is part of Infineon’s KS-2 series of radiation-hardened pseudo-static random-access memory (pSRAM / HYPERRAM™ 2.0), designed for NewSpace commercial space applications and high-reliability industrial environments. The device is manufactured using a 25 nm DRAM process and features an internal DRAM storage architecture whilst presenting the operational characteristics of SRAM externally. It incorporates a self-refresh mechanism, eliminating the need for complex refresh control logic in the host controller.

 

As high-speed expansion memory for low-Earth orbit satellite constellation payloads and on-board signal processing systems, this chip integrates four core advantages—radiation-hardened reliability, high-bandwidth throughput, low power consumption and a low-pin-count interface—within a miniature package. It perfectly aligns with the SWaP-C (Size, Weight, Power, Cost) optimisation requirements of the aerospace sector, whilst also complying with the AEC-Q100 automotive standard, making it suitable for use in extreme-environment automotive applications and high-end industrial edge computing devices.

 

II. CYEL18V2562-200BKXE Core Electrical and Hardware Specifications

Storage capacity: 256 Mbit

Communication interface: x8 HYPERBUS™, DDR (Double Data Rate)

Clock frequency: 200 MHz DDR

Theoretical bandwidth: up to 400 MB/s (1.6 Gbps)

Operating Voltage: 1.8 V (operating range 1.7 V to 2.0 V)

Package Type: PG-BGA-24 (24-ball FBGA, miniaturised low-pin-count package)

Temperature Range: -40 °C to +125 °C wide-temperature operation

Solder Ball Material: Lead-free Sn/Ag/Cu, compliant with RoHS regulations

 

latest company news about Infineon CYEL18V2562-200BKXE Radiation Tolerant High Bandwidth Pseudostatic RAM Memory  0

 

III. CYEL18V2562-200BKXE Radiation Tolerance and Key Reliability Characteristics

Specially hardened design for space ionising radiation environments, suitable for LEO (Low Earth Orbit) satellite missions:

Total Ionising Dose (TID): 100 krad (Si), meeting the radiation requirements for typical 2–5-year mission lifespans of commercial LEO satellites;

Single-electron-level (SEL) latch immunity > 58 LET (at 125°C), effectively resisting latch failures caused by high-energy particles in space;

Supports single-lot date code (SLDC), with 100% full-parameter electrical testing performed at the factory, accompanied by a Certificate of Conformity (CoC) and radiation batch acceptance test report;

Certified to AEC-Q100 automotive standards, ensuring long-term stable operation under severe operating conditions.

 

IV. CYEL18V2562-200BKXE Functional Architecture and Power Consumption Advantages

Pseudo-static architecture (pSRAM)

Features a built-in automatic self-refresh circuit, eliminating the need for the host to continuously issue refresh commands. Development complexity is comparable to SRAM, whilst offering the higher storage density of DRAM, thereby balancing ease of use with hardware costs.

Flexible Power Management Modes

Integrated hybrid sleep mode and deep power-down mode; supports partial array refresh (selectable from 1/8, 1/4, 1/2 or entire array), refreshing only active storage areas during idle periods to significantly reduce static power consumption, making it suitable for space-based platforms with limited power supplies.

Configurable Burst Transfer Mechanism

Supports linear and packet-based bursts, with selectable burst lengths of 16B, 32B, 64B or 128B; software-adjustable output drive strength facilitates signal integrity debugging and is suitable for high-speed PCB routing.

 

V. Typical Application Scenarios for the CYEL18V2562-200BKXE

Commercial Space (NewSpace)

Low-Earth orbit satellite constellations, CubeSats and nanosatellite on-board payloads; on-board image sensor data caching, communications baseband buffering, extended memory for on-board real-time AI processing, and high-speed external caching for on-board FPGAs.

High-Reliability Specialised Industrial Applications

Field remote sensing data acquisition equipment, unmanned platform on-board payloads, and high-temperature industrial edge computing units.

High-End Automotive Systems

In-vehicle domain controllers; high-speed data buffers for in-vehicle vision ADAS systems.

 

VI. Summary of the CYEL18V2562-200BKXE’s Core Value

The CYEL18V2562-200BKXE fills the gap in the commercial space sector for small-package, radiation-hardened, high-bandwidth high-speed cache solutions. Compared to traditional parallel SRAM, the HYPERBUS serial interface significantly reduces the number of PCB pins and simplifies layout; compared to standard commercial PSRAM, it offers comprehensive radiation tolerance specifications and long-term supply assurance.

Amid the trend towards lightweight satellite design, this model is the preferred high-speed expansion memory for on-board processors and FPGAs, striking a balance between high performance, reliability and commercial cost-effectiveness, making it the preferred memory device for the large-scale deployment of LEO satellite constellations.

Pub Time : 2026-07-23 15:22:29 >> News list
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