company blog about INFINEON IMT65R057M1H 650V 57mΩ CoolSiC™ Silicon Carbide MOSFET Transistors

INFINEON IMT65R057M1H 650V 57mΩ CoolSiC™ Silicon Carbide MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, offers the IMT65R057M1H CoolSiC™ MOSFET transistor from stock. With its exceptional switching performance, outstanding reliability, and broad application adaptability, it unlocks new possibilities for modern power electronics system design.

【IMT65R057M1H Product Overview】

The IMT65R057M1H represents a flagship offering within Infineon's CoolSiC™ MOSFET series. Constructed using advanced trench semiconductor technology, it is optimised to deliver minimal application losses and maximum operational reliability.

This IMT65R057M1H N-channel silicon carbide MOSFET features a 650V drain-source voltage (Vds) and a continuous drain current (Id) of 44A, with an on-resistance of just 0.057 ohms. Its low on-resistance and high current capability enable a 3-5% improvement in system efficiency, significantly extending the range of electric vehicles.

Housed in an HSOF-8 package, the IMT65R057M1H supports operating temperatures up to 175°C, simplifying thermal management systems and reducing costs while meeting high reliability demands in extreme environments.

【Advantages and Innovations of Silicon Carbide Technology】

Compared to traditional silicon-based devices, silicon carbide material possesses a wide bandgap characteristic, with a bandgap width approximately three times that of silicon and a critical electric field strength approximately ten times greater.

This enables SiC MOSFETs to utilise thinner, more heavily doped drift regions, significantly reducing on-resistance. Unlike bipolar IGBT devices, SiC MOSFETs are unipolar, eliminating turn-off tail currents and achieving up to 80% lower switching losses compared to silicon IGBTs.

Infineon's CoolSiC MOSFETs employ an asymmetric trench gate structure, leveraging the anisotropic properties of SiC crystals. The crystal plane utilised for the channel is oriented at a specific angle to the vertical axis, minimising interface state density and oxide layer traps to ensure maximum channel carrier mobility.

【IMT65R057M1H Reliability Design and Performance Features】

The IMT65R057M1H employs Infineon's enhanced M1H CoolSiC chip technology, significantly improving drain-source on-resistance, expanding the gate-source voltage range, and enhancing drive flexibility.

The M1H technology further expands the gate voltage withstand range, with steady-state withstand voltage values between -7V and 20V, and transient withstand voltage values between -10V and 23V. The recommended turn-on voltage is 15-18V, and the turn-off voltage is -5V to 0V.

The IMT65R057M1H MOSFET features a high threshold voltage (approximately 4.5V), surpassing many competitors, coupled with exceptionally low Miller capacitance. This elevated threshold voltage effectively suppresses parasitic conduction phenomena, enhancing system stability.

【IMT65R057M1H Packaging and Thermal Performance】

The IMT65R057M1H utilises an HSOF-8 package (also known as PG-HSOF-8), a surface-mount package suitable for high power density applications.

The IMT65R057M1H is engineered with outstanding thermal performance, supporting a maximum junction temperature of 175°C, thereby further enhancing power density. Its robust thermal characteristics enable stable operation in high-temperature and harsh operating environments.

【Application Areas of IMT65R057M1H】

The IMT65R057M1H silicon carbide MOSFET finds extensive application across multiple high-performance domains, serving as a key component for enhancing system efficiency.

Within the new energy vehicle sector, the IMT65R057M1H is suitable for main drive inverters, on-board chargers (OBC), and DC-DC converters. Its high switching frequency and low loss characteristics improve system efficiency, reduce energy dissipation, and extend driving range.

Within the renewable energy sector, this IMT65R057M1H MOSFET finds application in photovoltaic inverters and energy storage systems. The CoolSiC™ MOSFET's high switching frequency and low losses enhance solar conversion efficiency, enabling system efficiencies exceeding 99%.

Furthermore, the IMT65R057M1H is suitable for applications including industrial power supplies, server power supplies, telecommunications equipment, and uninterruptible power supplies (UPS). In these domains, it reduces system thermal requirements while increasing power density.