Infineon IPD50P04P4L-11 P-Channel OptiMOS™-P2 Automotive MOSFET Transistors
Shenzhen Mingjiada Electronics Co., Ltd, as a global well-known electronic components distributor, specialises in supplying Infineon IPD50P04P4L-11 P-channel OptiMOS™-P2 automotive MOSFET transistors. Designed for automotive electronics applications, these high-performance MOSFETs feature high efficiency, low loss and high reliability, making them ideal for applications such as electric vehicle power management, battery management systems (BMS) and on-board chargers.
Product Overview Of IPD50P04P4L-11
IPD50P04P4L-11 is a P-channel power MOSFET in Infineon's OptiMOS™-P2 family, manufactured using advanced trench technology with the following core features:
Voltage and current parameters: 40V withstand voltage, 50A continuous drain current
Package: PG-TO252-3 (DPAK) package, suitable for high-density PCB design
On-resistance: Very low RDS(on) characteristics, significantly reducing on-state losses.
Switching performance: Optimised gate charge (Qg) and output capacitance (Coss) for high efficiency switching
Temperature range: Wide operating temperature range for automotive grade applications
Product Advantages Of IPD50P04P4L-11
1. Excellent electrical performance
IPD50P04P4L-11 adopts Infineon's advanced OptiMOS™-P2 technology, which has:
Lower on-resistance (RDS(on)) for reduced power loss
Higher switching frequency capability for improved system efficiency
Optimised body diode characteristics for improved reverse recovery performance
Enhanced thermal performance for increased power density
2. Automotive Grade Reliability
As an automotive-grade MOSFET, the IPD50P04P4L-11 meets stringent automotive electronics standards:
AEC-Q101 certification to ensure reliability in harsh environments
Excellent vibration and shock resistance
High-temperature capability for engine compartment and other high-temperature environments
Long-term supply guarantee to meet automotive product lifecycle requirements
3. Wide range of applications
IPD50P04P4L-11 is suitable for a variety of automotive electronic systems:
Electric/hybrid vehicles: on-board chargers (OBC), DC-DC converters, battery management systems (BMS).
Traditional automotive electronics: electric power steering (EPS), fuel injection system, water pump/fuel pump control
Body electronics: intelligent door locks, seat adjustment, window control
Infotainment systems: power management, audio amplifiers
Technical Parameters Of IPD50P04P4L-11
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:40 V
Id - Continuous Drain Current:50 A
Rds On - Drain-Source Resistance:17.2 mOhms
Vgs - Gate-Source Voltage:- 16 V, + 5 V
Vgs th - Gate-Source Threshold Voltage:1.2 V
Qg - Gate Charge:45 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:58 W
Fall Time:39 ns
Height:2.3 mm
Length:6.5 mm
Product Type:MOSFETs
Rise Time:9 ns
Typical Turn-Off Delay Time:46 ns
Typical Turn-On Delay Time:12 ns
Width:6.22 mm
Unit Weight:330 mg
Application Solutions Of IPD50P04P4L-11
1. Automotive Power Management System
Typical applications of the IPD50P04P4L-11 in automotive power management systems include:
Load switching: to control the on/off of high-current loads
Reverse polarity protection: prevents reverse battery connection from damaging circuits
Power path management: Seamless switching in multiple power systems
Pre-charge circuitry: limits capacitor charging current and protects contactors
2. Motor Drive Applications
With its high current capability and low on-resistance, the IPD50P04P4L-11 is ideally suited for use in:
Small DC motor drives
Stepper motor control
Fan/pump motor drives
Power seat/window drives
3. H-bridge topologies
In H-bridge circuits that require bidirectional control, the IPD50P04P4L-11 can be used with N-channel MOSFETs to achieve:
DC motor forward and reverse control
Solenoid valve drive
Other applications requiring bidirectional current
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