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company blog about Mingjiada Electronics Supplies SIR626 – Vishay 60V/186A N-channel TrenchFET® Gen IV Power MOSFET

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Mingjiada Electronics Supplies SIR626 – Vishay 60V/186A N-channel TrenchFET® Gen IV Power MOSFET
Latest company news about Mingjiada Electronics Supplies SIR626 – Vishay 60V/186A N-channel TrenchFET® Gen IV Power MOSFET

Shenzhen Mingjiada Electronics Co., Ltd. supplies the SIR626 N-channel power MOSFET | Genuine stock supplier


SIR626 Product Overview

Shenzhen Mingjiada Electronics Co., Ltd., a specialist supplier of electronic components from stock, has been supplying genuine SIR626 (SIR626LDP) Vishay fourth-generation TrenchFET® N-channel power MOSFETs on a long-term basis. This device is a 60V, low-resistance, high-performance switching MOSFET housed in a PowerPAK® SO‑8 surface-mount package. With its ultra-low on-resistance, low gate charge and high current-carrying capacity, it is the preferred power device for industrial power supplies, motor drives, DC‑DC synchronous rectification and new energy equipment. Mingjiada Electronics maintains ample stock and supports both sample requests and bulk orders, providing a stable supply of components for manufacturers in the industrial control, new energy and power equipment sectors.

 

SIR626 Specifications

- Device type: N-channel MOSFET (N-channel metal-oxide-semiconductor field-effect transistor)

- Drain-source voltage Vds: 60V

- Continuous drain current Id (Tc=25°C): 100A

- Maximum power dissipation Pd: 104W

- On-resistance Rds(on): 1.7 mΩ

- Gate threshold voltage Vgs(th): 2 V (minimum)

- Output charge Qoss: 68 nC @ Vds = 30 V

- Package: PowerPAK® SO‑8

- Operating temperature range: –55 °C to +150 °C

- Environmental standards: Lead-free, compliant with RoHS requirements


Key Features of the SIR626

1. Fourth-generation TrenchFET® process, with on-resistance reduced by 40% compared to the previous generation, significantly lowering on-state losses, generating less heat and delivering higher power conversion efficiency

2. Optimised internal interconnect structure reduces package resistance by 66 per cent, fully unleashing chip performance and enhancing power density

3. Low gate charge and low output charge result in minimal switching losses, delivering excellent performance in high-frequency DC–DC circuits

4. High current-carrying capacity combined with the compact PowerPAK SO‑8 package saves PCB layout space, facilitating miniaturised equipment design

5. 100% tested for Rg and UIS avalanche reliability, offering strong shock resistance and high long-term operational stability

6. Wide operating temperature range, suitable for harsh industrial environments and meeting the design requirements of 24V industrial power supply systems


Main Application Areas for the SIR626

- DC–DC step-down/step-up converters, synchronous rectification circuits

- 24V industrial power supply systems, high-power power modules

- Industrial motor drives, power tool controllers

- Solar micro-inverters, new energy storage power supplies

- Battery protection switches, load switch management circuits

- Industrial control equipment, telecommunications base station power supplies, non-safety-critical automotive power supply solutions


Advantages of sourcing the SIR626 from Shenzhen Mingjiada Electronics

Shenzhen Mingjiada Electronics Co., Ltd. has specialised in the distribution of electronic components for several decades and maintains stable global supply channels. We specialise in the spot supply of genuine ICs, power devices, sensors, memory chips and other components. We can supply genuine SIR626 products and support both small-batch trial orders and large-volume, long-term supply services. Manufacturers and R&D companies looking to procure power MOSFET devices are welcome to contact Mingjiada Electronics to enquire about SIR626 stock, pricing and lead times.


Tags: SIR626LDP, SIR626LD, SIR626L, SIR626

Pub Time : 2026-08-28 10:33:14 >> News list
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