STW58N60DM2AG Product Description
The STW58N60DM2AG is a car-grade N-channel power MOSFET from STMicroelectronics, featuring advanced MDmesh™ DM2 technology, with low on-resistance (RDS(on) = 0.052Ω typical) and high switching efficiency. The STW58N60DM2AG is packaged in a TO-247-3 package, compliant with AEC-Q101 automotive certification, and can operate reliably in harsh environments from -55°C to 150°C, ensuring long-term reliability of automotive electronic systems.
Mingjiada Electronics, as a professional electronic component supplier, now offers the STW58N60DM2AG in brand-new, original packaging, guaranteeing 100% genuine authenticity, with a minimum order quantity of 1 piece. The STW58N60DM2AG is particularly suitable for high-power applications such as electric vehicles (EVs), on-board chargers (OBCs), and industrial power supplies.
Product Features
The STW58N60DM2AG features the following core Features:
High-performance switching capability
600V drain-source voltage (Vdss), suitable for high-voltage power systems
50A continuous drain current (Id), with enhanced peak current capability
Low on-resistance (RDS(on) = 60mΩ @ 25A, 10V), reducing power loss
Automotive-grade reliability
AEC-Q101 certified, suitable for automotive electronics (e.g., OBC, DC-DC converters)
360W maximum power dissipation (Pd), optimised for thermal performance 1
Optimised gate drive
Gate charge (Qg) as low as 90nC @ 10V, reducing switching losses
Gate drive voltage (Vgs) range ±25V, compatible with various drive circuits
Low input capacitance (Ciss = 4100pF @ 100V), enhancing high-frequency switching performance
The STW58N60DM2AG also features fast recovery body diode characteristics, extremely low gate charge and input capacitance, and 100% avalanche testing assurance. The STW58N60DM2AG's Zener protection and extremely high dv/dt durability ensure stable operation even in harsh environments.
Key technical parameters of the STW58N60DM2AG are as follows:
Manufacturer: STMicroelectronics
Package: TO-247-3 (through-hole mounting)
Drain-source voltage (Vdss): 600V
Continuous drain current (Id): 50A @ 25°C
On-resistance (RDS(on)): 60mΩ @ 25A, 10V
Gate charge (Qg): 90nC @ 10V
Power Dissipation (Pd): 360W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Threshold Voltage (Vgs(th)): 5V @ 250μA
Input Capacitance (Ciss): 4100pF @ 100V
Pulse Drain Current: 200A
STW58N60DM2AG is packaged in a TO-247 package, through-hole mounting type, and shipped in tubular packaging. STW58N60DM2AG complies with RoHS standards, with a moisture sensitivity level (MSL) of Level 1 (unlimited).
Typical Applications
The STW58N60DM2AG is widely used in the following fields:
Automotive electronic systems
On-board chargers (OBC)
DC-DC converters
Electric vehicle (EV) power management systems
Industrial power supplies
High-efficiency converters
Bridge topology
ZVS phase-shift converters
Other high-power applications
Photovoltaic inverters
High-frequency converters
Industrial control systems
STW58N60DM2AG is particularly suitable for applications requiring high reliability and high performance. The MDmesh™ DM2 technology of STW58N60DM2AG significantly reduces energy loss in switching applications.
For inquiries, please contact:
Contact Person: Mr. Chen
Phone: +86 13410018555 (Mr. Chen)
Email: sales@hkmjd.com
Official Website: https://www.integrated-ic.com/
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