As a world-renowned supplier of electronic components, Mingjiada Electronics is committed to providing customers with high-quality RF power transistors.
A2T27S020GNR1 Product Overview
The A2T27S020GNR1 is a high-performance RF power LDMOS transistor designed by NXP Semiconductors and optimised for mobile communication base station applications. It operates over the frequency range of 400MHz to 2700MHz and is capable of meeting the needs of multiple wireless communication standards, including 2G, 3G, 4G and 5G base stations.
The A2T27S020GNR1 features N-channel enhancement mode LDMOS technology with excellent linearity performance and high efficiency, making it suitable for use in digital pre-distortion (DPD) error correction systems. It is designed to provide broadband drive capability while supporting high power gain and low distortion characteristics.
A2T27S020GNR1 Product Features
Wide Frequency Range: The A2T27S020GNR1 supports a frequency range of 400MHz to 2700MHz for a wide range of communication bands.
High Power Output: With an average output power of 2.5W, the A2T27S020GNR1 is capable of meeting the power requirements of base station applications.
High Power Gain: The A2T27S020GNR1 has a typical gain of 21dB, ensuring signal amplification.
High Efficiency: The A2T27S020GNR1 has a drain efficiency of up to 20.8% under typical operating conditions, effectively reducing energy consumption.
Low distortion: A2T27S020GNR1 has excellent linearity performance and is suitable for digital pre-distortion systems.
Package Format: The A2T27S020GNR1 is packaged in a TO-270G-2 package, which provides good thermal performance and mechanical stability.
RoHS compliant: environmentally friendly design, RoHS3 compliant.
A2T27S020GNR1 Specification Parameters
Operating Frequency Range: 400MHz - 2700MHz
Average Output Power: 2.5 W
Power Gain: 21 dB
Drain efficiency: 20.8 %
Input Return Loss: -17 dB
Adjacent Channel Power Ratio (ACPR): -45.3 dBc
Package: TO-270G-2
Product Applications
A2T27S020GNR1 is widely used in mobile communication base stations, especially in the following areas:
2G/3G/4G/5G base stations: support a variety of communication standards, providing efficient and stable RF power amplification.
Digital pre-distortion system: optimises linear performance and reduces signal distortion.
Wideband Driver: for applications requiring high power gain and wideband performance.
With its excellent performance and reliability, the A2T27S020GNR1 is an ideal choice for RF power amplifiers for mobile communication base stations. As a supplier, Mingjiada is committed to providing customers with efficient and reliable RF power solutions.
A2T27S020GNR1 Pin Connections
Contact Information
Contact Person: Mr Chen
Tel: +86 13410018555
E-mail: sales@hkmjd.com
Website: www.integrated-ic.com
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
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