company blog about Supply/Recycle PUOLOP PTQ45P02 High-Efficiency 20V 45A P-Channel Power MOSFET Transistor

Supply/Recycle PUOLOP PTQ45P02 High-Efficiency 20V 45A P-Channel Power MOSFET Transistor

Shenzhen Mingjiada Electronics Co., Ltd. has established itself as a leader in electronic component recycling and distribution through its extensive product portfolio, global perspective, and professional services.

The company supplies and recycles the PTQ45P02: a high-efficiency P-channel power MOSFET designed to empower power management in portable devices.

The PTQ45P02 is an advanced P-channel power MOSFET transistor engineered to address these challenges. With its 20V breakdown voltage, 45A current handling capability, and seamless support for 1.8V low logic levels, it has become a core component in high-end load switches, battery management systems, and similar applications.

I. Core Characteristics of PTQ45P02:

The PTQ45P02 is an advanced P-channel power MOSFET specifically engineered for demanding power switching applications. P-channel MOSFETs are frequently employed as high-side switches in power circuits (connecting the power source to the load), a configuration that simplifies driver circuitry and offers distinct advantages in systems controlled by low-voltage logic.

The PTQ45P02's competitive edge lies in its key electrical parameters:

High current and voltage ratings: It supports a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of up to 45A. This specification enables it to handle inrush currents with ease in high power density applications such as mobile power supplies, RC aircraft, and high-current motor drives.

Exceptional switching efficiency: Its gate threshold voltage (Vgs(th)) is as low as 400mV, enabling reliable switching with extremely low control voltages (down to 1.8V logic levels). This feature allows direct interfacing with modern microprocessors, DSPs, or low-voltage ASICs without additional level-shifting circuits, saving space and reducing system complexity.

Optimised dynamic performance: The device features an input capacitance (Ciss) of 3.5nF and a reverse transfer capacitance (Crss) of 445pF. These low capacitance values require less charge for gate driving during high-speed switching, significantly reducing switching losses and enhancing overall system efficiency. This makes it particularly suitable for high-frequency PWM applications.

II. PTQ45P02 Specifications:

Transistor Type MOSFET

Control Channel Type P-channel

Pd - Maximum Power Dissipation 35 W

Vds - Maximum Drain-Source Voltage 20 V

Vgs - Maximum Gate-Source Voltage 12 V

Id - Maximum Drain Current 45 A

Tj - Maximum Junction Temperature 150 °C

Vgs(th) - Maximum Threshold Gate Voltage 1 V

Qg - Total Gate Charge 55 nC

tr - Rise Time 42 nS

Coss - Output Capacitance 577 pF

III. PTQ45P02 Technical Highlights:

Exceptional compatibility with 1.8V logic level driving

This represents the most significant advantage of the PTQ45P02. Traditional MOSFETs typically require higher gate voltages (e.g., 4.5V or 10V) for full conduction, whereas the PTQ45P02 achieves efficient switching at just 1.8V. This enables seamless integration with mainstream low-power microprocessors, SoCs, and digital logic chips without additional level-shifting circuits. Consequently, it simplifies design, reduces costs, and minimises component count and potential failure points.

Optimised Packaging and Efficient Power Management

Its PDFN3333 surface-mount package delivers excellent thermal performance, facilitating rapid heat dissipation from the chip to the PCB and enhancing system reliability. Combined with its low on-resistance characteristics, this results in exceptionally low power dissipation during switching operation, making it ideal for efficiency-critical portable devices.

IV. PTQ45P02 Application Scenarios

The PTQ45P02's performance characteristics enable outstanding performance across multiple cutting-edge fields:

High-End Load Switching and Power Management: This represents its most classic application. Within the main power path of portable devices such as mobile phones, tablets, and drones, the PTQ45P02 functions as an efficient ‘power gate’. Its P-channel characteristics permit placement between the power supply positive terminal and the load. Direct control of power supply to individual modules is achieved via low-voltage GPIO signals, enabling precise power management.

Battery Protection and Switching Circuits: In battery-powered devices such as power banks and power tools, this MOSFET is the ideal choice for constructing discharge control switches within Battery Management Systems (BMS). Its low conduction losses minimise energy dissipation, thereby extending device runtime.

Motor Drive and ESCs for RC Models: For brushless motors used in RC aircraft and small robots, electronic speed controllers (ESCs) require power switches capable of rapid response and efficient switching. The PTQ45P02's high current capability and fast switching characteristics facilitate more precise and efficient motor control.

Motherboard VRMs and DC-DC Converters: Within computer motherboards or servers, certain non-core voltage generation circuits also employ P-channel MOSFETs as upper switches, paired with N-channel lower switches to form synchronous rectification architectures. The PTQ45P02 delivers efficient power conversion in such designs.