company blog about TI UCC27712DR 620V Half Bridge Driver With Interlock

TI UCC27712DR 620V Half Bridge Driver With Interlock

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, supplies the TI UCC27712DR 620V half-bridge gate driver.

This driver delivers a highly reliable solution for motor drive and power conversion applications, featuring a 620V high operating voltage, 2.8A peak sink current and 1.8A sink current capability, alongside safety features such as interlock and dead-time protection.

【UCC27712DR Product Description】

The UCC27712DR is a 620V high-side and low-side gate driver with 1.8A sink current and 2.8A source current capability, specifically designed to drive power MOSFETs or IGBTs.

For IGBTs, the recommended VDD operating voltage is 10V to 20V; for power MOSFETs, the recommended VDD operating voltage is 10V to 17V.

The UCC27712DR incorporates protection features whereby the outputs remain low when the input remains open-circuited or when the minimum input pulse width specification is not met. Interlock and dead-time functions prevent simultaneous turn-on of both outputs. Furthermore, the device accepts a wide bias supply range and provides UVLO protection for both the VDD and HB bias supplies.

Employing advanced high-voltage device technology, the UCC27712DR features robust drivers with exceptional noise and transient immunity, including large negative input voltage tolerance, high dV/dt tolerance, a wide negative transient safe operating area (NTSOA) at the switching node, and interlocking.

The UCC27712DR incorporates a grounded reference channel (LO) and a floating channel (HO), the latter dedicated for bootstrap or isolated power supply operation. The device exhibits fast propagation delay and excellent delay matching between the two channels. Each channel on the UCC27712DR is controlled by its respective input pins HI and LI.

【UCC27712DR Key Parameters and Performance Specifications】

The UCC27712DR delivers exceptional drive capability with peak output currents of 2.8A sink and 1.8A source, enabling rapid switching of power devices to minimise switching losses.

The UCC27712DR exhibits rapid dynamic response with a typical rise time of 16ns, a typical fall time of 10ns, a propagation delay of just 100ns, and a typical delay matching of 12ns between channels.

The UCC27712DR's robustness is commendable, offering 50V/ns dV/dt immunity, logic operation voltage up to -11V on the HS pin, and negative input voltage tolerance down to -5V.

Its wide operating temperature range, spanning -40°C to +125°C, makes it suitable for operation in various harsh environments.

【UCC27712DR Interlock Function and System Safety】

The most prominent feature of the UCC27712DR is its integrated interlock function, which completely prevents through-current in half-bridge circuits.

This interlock is achieved through a dual-input design. When both input signals are simultaneously high, the driver ensures neither output conducts simultaneously, incorporating an internal 150ns dead time.

This hardware-level interlock mechanism provides additional system safety, preventing catastrophic failures caused by power switch bypass even if control circuitry malfunctions.

Outputs remain low when inputs remain open-circuited or fail to meet minimum pulse width specifications, further enhancing system reliability.

【UCC27712DR Application Domains】

The UCC27712DR is suitable for diverse power electronics applications:

Motor drives: including stepper motors, HVAC, fans, power tools, robotics, and drones

Power conversion: bridge converters in offline AC/DC power supplies for high-density switching mode power supplies in servers, telecoms, IT, and industrial infrastructure

Energy conversion: DC-to-AC inverters such as solar inverters and uninterruptible power supply systems

Automotive electronics: Automotive-grade version UCC27712QDRQ1 suitable for automotive applications

Within the DC/AC converter section, the UCC27712DR functions as a high-voltage, high-speed power MOSFET and IGBT driver, capable of driving N-channel power devices in high-side configurations with a maximum operating voltage of 600V.