Shenzhen Mingjiada Electronics Co., Ltd. maintains a long-term, large-volume stock of Vishay SIR680 series N-channel 80V (D-S) MOSFETs, including the SIR680ADP model. With a guarantee of genuine products, extensive stock and highly competitive prices, we provide efficient and reliable power device supply services to customers worldwide.
I. SIR680 Product Overview
The Vishay SIR680 series is a new generation of N-channel power MOSFETs utilising TrenchFET® Gen IV technology, featuring a 80V drain-source voltage (Vds) and a continuous drain current capacity of up to 100A–130A. These devices are housed in PowerPAK® SO-8 surface-mount packages, delivering industry-leading power density and thermal performance within a compact 6.15 mm × 5.15 mm footprint.
SIR680ADP.png
Designed specifically for high-power-density applications, the SIR680 series offers an excellent combination of ultra-low on-resistance (RDS(on)) and extremely low gate charge (Qg), enabling significant improvements in power conversion efficiency and reductions in system power consumption.
II. Key Features and Technical Advantages
1. Ultra-low on-resistance (RDS(on))
The SIR680 series MOSFETs feature extremely low on-resistance, effectively reducing conduction losses:
SIR680ADP: 2.35 mΩ (typical) @ 10 V 125 A
2. Industry-leading figure of merit (FOM)
The SIR680ADP achieves a Figure of Merit (FOM) for the product of on-resistance and gate charge (RDS × Qg) of 129 mΩ·nC, which is the best in its class among 80V MOSFET products and 13 per cent higher than the nearest competitor. This key metric directly determines switching efficiency in power conversion applications—the lower the FOM value, the lower the switching losses.
3. TrenchFET® Gen IV Technology
As a flagship product of the fourth-generation TrenchFET technology, the SIR680 series has been comprehensively optimised in the following areas:
Extremely low RDS-Qg figure of merit
Specifically tuned for the lowest RDS-Qoss figure of merit
100% testing for Rg and UIS (unclamped inductor switching) to ensure device reliability
4. Outstanding Thermal Performance
Maximum power dissipation (Pd): 104 W
Operating temperature range: –55 °C to +150 °C
The PowerPAK® SO-8 package provides an excellent thermal path
5. Low Gate Charge, Supporting High-Frequency Switching
Typical gate charge Qg: 40.5 nC to 69.5 nC (depending on the model)
Low input capacitance (Ciss), supporting higher switching frequencies
III. Typical Application Areas
The Vishay SIR680 series MOSFETs are widely used in various medium- and low-voltage, high-power-density power conversion applications:
Power conversion
Synchronous rectification
Primary-side switching
DC/DC converters (buck, boost and buck-boost topologies)
AC/DC Power Conversion
Resonant Switching Converters
Servers and Telecommunications Equipment
Server Power Supply Units (PSUs)
Data Centre 48V Bus Power Systems
Telecommunications Infrastructure Power Supplies
OR-ing Functional Circuits
Industrial and Motor Control
Industrial Motor Drives and Servo Control Systems
Frequency Converters
Power Tool Motor Drives
New Energy and Energy Storage
Solar Micro-inverters
Battery Switching in Battery Management Systems (BMS)
Load Switches
Conclusion
The Vishay SIR680 series of N-channel 80V MOSFETs, with the outstanding performance of TrenchFET Gen IV technology—ultra-low on-resistance, industry-leading FOM values and current capabilities of up to 130A—have become the ideal choice of switching devices for high-power-density applications such as server power supplies, DC/DC conversion and motor drives.
Shenzhen Mingjiada Electronics Co., Ltd. maintains a large stock of Vishay SIR680 series MOSFETs (SIR680ADP) and welcomes enquiries from both new and existing customers regarding quotations and sample purchases.
Contact Us
Contact: Mr Chen
Tel: +86 13410018555
Email: sales@hkmjd.com
Address: Rooms 1239–1241, Guoli Building, Zhenzhong Road, Futian District, Shenzhen
Tags: SIR680ADP, SIR680AD, SIR680A, SIR680
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