China Integrated Circuit Chip

Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors

Part Number:SCTH35N65G2V-7

Vdss:650 V

Drive Voltage:18V, 20V
Integrated Circuit Chip SCTH40N120G2V-7 N-Channel Surface Mount Transistors

Part Number:SCTH40N120G2V-7

Operating Temperature:-55°C ~ 175°C (TJ)

Vgs th - Gate-Source Threshold Voltage:5 V
Integrated Circuit Chip SCT10N120AG 1200V 12A N-Channel Transistors TO-247-3

Part Number:SCT10N120AG

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 200 C
Single FETs MOSFETs Transistors TW030N120C,S1F Integrated Circuit Chip TO-247-3

Part Number:TW030N120C,S1F

Input Capacitance (Ciss) (Max) @ Vds:2925 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs:82 nC @ 18 V
N-Channel Transistors TW015N65C,S1F Integrated Circuit Chip TO-247-3 Transistors

Part Number:TW015N65C,S1F

Technology:SiCFET (Silicon Carbide)

Input capacitance:4850pF
Integrated Circuit Chip TW048N65C,S1F TO-247-3 Silicon Carbide N-Channel Transistors

Part Number:TW048N65C,S1F

Vgs(th) (Max) @ Id:5V @ 1.6mA

Rise Time:43 ns
Integrated Circuit Chip SCTW40N120G2VAG Power MOSFET N-Channel Transistors TO-247-3

Part Number:SCTW40N120G2VAG

Drive Voltage (Max Rds On, Min Rds On):18V

Current - Continuous Drain (Id) @ 25°C:33A (Tc)
SCTWA30N120 Silicon Carbide N-Channel Transistors TO-247-3 Through Hole

Part Number:SCTWA30N120

Vds - Drain-Source Breakdown Voltage:1.2 kV

Rds On - Drain-Source Resistance:100 mOhms
650V Transistors IMBG65R083M1HXTMA1 Silicon Carbide MOSFET Single Tube TO-263-8

Part Number:IMBG65R083M1HXTMA1

Technology:SiC

Mounting Style:SMD/SMT
Integrated Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors

Part Number:IMBG65R107M1HXTMA1

Series:CoolSIC™ M1

FET Type:N-Channel
Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8

Part Number:IMBG65R039M1HXTMA1

RDS (on) (@ Tj = 25°C):39 mΩ

VDS max:650 V
Integrated Circuit Chip BSZ100N06LS3GATMA1 8-PowerVDFN 60V N-Channel Transistors

Part Number:BSZ100N06LS3GATMA1

QG (typ @10V):34 nC

Drain to Source Voltage (Vdss):60 V

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China Integrated Circuit Chip

Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors

Integrated Circuit Chip SCTH40N120G2V-7 N-Channel Surface Mount Transistors

Integrated Circuit Chip SCT10N120AG 1200V 12A N-Channel Transistors TO-247-3

Single FETs MOSFETs Transistors TW030N120C,S1F Integrated Circuit Chip TO-247-3

N-Channel Transistors TW015N65C,S1F Integrated Circuit Chip TO-247-3 Transistors

Integrated Circuit Chip TW048N65C,S1F TO-247-3 Silicon Carbide N-Channel Transistors

Integrated Circuit Chip SCTW40N120G2VAG Power MOSFET N-Channel Transistors TO-247-3

SCTWA30N120 Silicon Carbide N-Channel Transistors TO-247-3 Through Hole

650V Transistors IMBG65R083M1HXTMA1 Silicon Carbide MOSFET Single Tube TO-263-8

Integrated Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors

Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8

Integrated Circuit Chip BSZ100N06LS3GATMA1 8-PowerVDFN 60V N-Channel Transistors

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