Part Number:NTHL040N120SC1
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Part Number:NVMTS0D7N04CTXG
Product Category:MOSFET
Rds On (Max) @ Id, Vgs:0.67mOhm @ 50A, 10V
Part Number:NVHL060N090SC1
Zero Gate Voltage Drain Current:100 uA
Gate−to−Source Leakage Current:±1 uA
Part Number:NTP055N65S3H
Typical Turn-On Delay Time:30 ns
Series:SuperFET® III
Part Number:NTMFS0D9N03CGT1G
Pulsed Drain Current:900 A
Junction−to−Case – Steady State:1.0 °C/W
Part Number:FDBL9403-F085T6
Source Current:330 A
Input Capacitance:6985 pF
Part Number:NTMFS5C628NT1G
Turn−Off Delay Time:25 ns
Forward Diode Voltage:1.2V
Part Number:NVH4L040N65S3F
Technology:MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Part Number:NVMFS5C670NWFT1G
Drive Voltage:10V
Rds On:7mOhm
Part Number:NTP125N65S3H
Technology:MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Part Number:NTMFS005N10MCLT1G
Vgs(th) (Max) @ Id:3V @ 192µA
Power Dissipation (Max):3W (Ta), 125W (Tc)
Part Number:NTH4L015N065SC1
Charge Time:17 ns
Discharge Time:11 ns