Part Number:TW015N65C,S1F
Technology:SiCFET (Silicon Carbide)
Input capacitance:4850pF
Part Number:TW048N65C,S1F
Vgs(th) (Max) @ Id:5V @ 1.6mA
Rise Time:43 ns
Part Number:SCTW40N120G2VAG
Drive Voltage (Max Rds On, Min Rds On):18V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Part Number:SCTWA30N120
Vds - Drain-Source Breakdown Voltage:1.2 kV
Rds On - Drain-Source Resistance:100 mOhms
Part Number:IMBG65R083M1HXTMA1
Technology:SiC
Mounting Style:SMD/SMT
Part Number:IMBG65R107M1HXTMA1
Series:CoolSIC™ M1
FET Type:N-Channel
Part Number:IMBG65R039M1HXTMA1
RDS (on) (@ Tj = 25°C):39 mΩ
VDS max:650 V
Part Number:BSZ100N06LS3GATMA1
QG (typ @10V):34 nC
Drain to Source Voltage (Vdss):60 V
Part Number:BSC004NE2LS5ATMA1
Package:SuperSO8 5x6
QG (typ @4.5V):135 nC
Part Number:BSC100N06LS3GATMA1
QG (typ @10V):2600 pF
Drain to Source Voltage (Vdss):200 A
Part Number:IPD35N10S3L26ATMA1
Technology:OptiMOS™-T
RthJC(Max):2.1 K/W
Part Number:BSZ100N03MSGATMA1
Channel Mode:Enhancement
Series:OptiMOS 3M