Part Number:IMBG65R039M1HXTMA1
RDS (on) (@ Tj = 25°C):39 mΩ
VDS max:650 V
Part Number:BSZ100N06LS3GATMA1
QG (typ @10V):34 nC
Drain to Source Voltage (Vdss):60 V
Part Number:BSC004NE2LS5ATMA1
Package:SuperSO8 5x6
QG (typ @4.5V):135 nC
Part Number:BSC100N06LS3GATMA1
QG (typ @10V):2600 pF
Drain to Source Voltage (Vdss):200 A
Part Number:IPD35N10S3L26ATMA1
Technology:OptiMOS™-T
RthJC(Max):2.1 K/W
Part Number:BSZ100N03MSGATMA1
Channel Mode:Enhancement
Series:OptiMOS 3M
Part Number:IMW65R048M1HXKSA1
FET Type:N-Channel
Product Status:Active
Part Number:IPB65R115CFD7AATMA1
Drive Voltage:10V
Drain to Source Voltage:650 V
Part Number:IMW65R072M1HXKSA1
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Part Number:IPT019N08N5ATMA1
Rds On - Drain-Source Resistance:1.9 mOhms
Fall Time:17 ns
Part Number:IPW65R075CFD7AXKSA1
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Power Dissipation (Max):171W (Tc)
Part Number:AUIRF5210STRL
Operating Temperature:-55°C ~ 150°C (TJ)
Height:2.3 mm