Part Number:FF750R17ME7DB11BPSA1
Rated resistance:5 kΩ
Deviation of R100:-5-5 %
Part Number:FF45MR12W1M1B11BOMA1
DC drain current:25A
Gate threshold voltage(Typ):4.5V
Part Number:FF225R17ME7B11BPSA1
IGBT Type:Trench Field Stop
Configuration:Half Bridge
Part Number:FS100R12N2T7B15BPSA1
Configuration:Full Bridge Inverter
Gate-Emitter Leakage Current:100 nA
Part Number:FF8MR12W2M1PB11BPSA1
Voltage:1200 V
Resistance:8 mΩ
Part Number:FP35R12N2T7BPSA2
Weight:24g
Repetitive peak drain current:30A
Part Number:FF11MR12W1M1PB11BPSA1
Series:CoolSiC™+
Technology:Silicon Carbide (SiC)
Part Number:FF8MR12W2M1B11BOMA1
IDRM:300A
COSS stored energy:264 µJ
Part Number:FS3L200R10W3S7FB94BPSA1
Implemented drain current:15A
Input:Standard
Part Number:FF6MR12W2M1PB11BPSA1
Drain-source voltage(Tvj = 25°C ):1200V
Gate-source voltage:-10 V / 20 V
Part Number:FS300R17OE4B81BPSA1
Voltage - Collector Emitter Breakdown:1700 V
Current - Collector:300 A
Part Number:FF23MR12W1M1B11BOMA1
Mounting Type:Chassis Mount
Rated resistance(TNTC = 25°C) Typ:5,00 kΩ