Part Number:FS55MR12W1M1HB11NPSA1
Technology:Silicon Carbide (SiC)
Configuration:6 N-Channel (Full Bridge)
Part Number:FF6MR12KM1PHOSA1
ID nom:250A
Technology:Silicon Carbide (SiC)
Part Number:FP75R12N3T7BPSA1
VCES:1200 V
Overload operation:175°C
Part Number:FF3MR12KM1HOSA1
Drain to Source Voltage (Vdss):1200V (1.2kV)
Operating Temperature(Min):-40°C (TJ)
Part Number:FP15R12KE3GBPSA1
Module lead resistance:2.5mΩ
Storage temperature:-40 - 125 °C
Part Number:FP75R12N2T4BPSA1
Rds On (Max) @ Id, Vgs:2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds:39700pF @ 800V
Part Number:FP75R12N2T7BPSA2
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.55 V
Part Number:FS75R12KE3BPSA1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Part Number:FP75R12N2T4BPSA1
Product Type:IGBT Modules
Collector-Emitter Saturation Voltage:1.85 V
Part Number:FS150R12N2T7BPSA2
Voltage - Collector Emitter Breakdown:1200 V
Current - Collector Cutoff:1.2 µA
Part Number:FP100R12N2T7BPSA2
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 175 C
Part Number:FP150R12N3T7B11BPSA1
Product Category:IGBT Modules
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 150A