China Integrated Circuit Chip

IC Chip NTMFS5C628NT1G 5-DFN Silicon Carbide Single N-Channel Transistors

Part Number:NTMFS5C628NT1G

Turn−Off Delay Time:25 ns

Forward Diode Voltage:1.2V
Single N-Channel Transistors NVH4L040N65S3F TO-247-4 Integrated Circuit Chip

Part Number:NVH4L040N65S3F

Technology:MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
NVMFS5C670NWFT1G 60V 71A MOSFET Power Single N-Channel Transistors 5-DFN

Part Number:NVMFS5C670NWFT1G

Drive Voltage:10V

Rds On:7mOhm
Transistors TO-220-3 NTP125N65S3H Integrated Circuit Chip Power N‐Channel Transistors

Part Number:NTP125N65S3H

Technology:MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Single N-Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips

Part Number:NTMFS005N10MCLT1G

Vgs(th) (Max) @ Id:3V @ 192µA

Power Dissipation (Max):3W (Ta), 125W (Tc)
NTH4L015N065SC1 N-Channel 650V 142A MOSFET Silicon Carbide Transistors

Part Number:NTH4L015N065SC1

Charge Time:17 ns

Discharge Time:11 ns
Power MOSFET NTH4L027N65S3F Integrated Circuit Chip TO-247-4 N-Channel Transistors

Part Number:NTH4L027N65S3F

Mounting Style:Through Hole

Transistor Polarity:N-Channel
Integrated Circuit Chip NVMFS5C612NWFT1G N-Channel Single MOSFETs Transistors

Part Number:NVMFS5C612NWFT1G

Continuous Drain Current:225 A

Gate−to−Source Voltage:±20 V
Integrated Circuit Chip IXYX110N120B4 1200V 340A 1360W IGBT Transistors

Part Number:IXYX110N120B4

Maximum Gate Emitter Voltage:- 20 V, 20 V

Continuous Collector Current at 25 C:340 A
TO-247-3 Through Hole IXYH55N120C4 1200V 140A 650W Single IGBT Transistors

Part Number:IXYH55N120C4

Collector- Emitter Voltage VCEO Max:1.2 kV

Collector-Emitter Saturation Voltage:2.5 V
Electronic Integrated Circuits IXYH85N120C4 IGBT Transistors TO-247-3 Package

Part Number:IXYH85N120C4

Weight:6 g

Operating Temperature:-55°C ~ 175°C (TJ)
1200V IGBT Transistors IXYX110N120A4 Integrated Circuit Chip TO-247-3 Through Hole

Part Number:IXYX110N120A4

Test Condition:600V, 50A, 1.5Ohm, 15V

Supplier Device Package:TO-247 (IXTH)

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China Integrated Circuit Chip

IC Chip NTMFS5C628NT1G 5-DFN Silicon Carbide Single N-Channel Transistors

Single N-Channel Transistors NVH4L040N65S3F TO-247-4 Integrated Circuit Chip

NVMFS5C670NWFT1G 60V 71A MOSFET Power Single N-Channel Transistors 5-DFN

Transistors TO-220-3 NTP125N65S3H Integrated Circuit Chip Power N‐Channel Transistors

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NTH4L015N065SC1 N-Channel 650V 142A MOSFET Silicon Carbide Transistors

Power MOSFET NTH4L027N65S3F Integrated Circuit Chip TO-247-4 N-Channel Transistors

Integrated Circuit Chip NVMFS5C612NWFT1G N-Channel Single MOSFETs Transistors

Integrated Circuit Chip IXYX110N120B4 1200V 340A 1360W IGBT Transistors

TO-247-3 Through Hole IXYH55N120C4 1200V 140A 650W Single IGBT Transistors

Electronic Integrated Circuits IXYH85N120C4 IGBT Transistors TO-247-3 Package

1200V IGBT Transistors IXYX110N120A4 Integrated Circuit Chip TO-247-3 Through Hole

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