China Integrated Circuit Chip

H2PAK-7 Surface Mount SCTH90N65G2V-7 N-Channel Silicon Carbide Transistors

Part Number:SCTH90N65G2V-7

FET Type:N-Channel

Id - Continuous Drain Current:90 A
N-Channel Transistors SCT4026DW7HRTL Integrated Circuit Chip TO-263-7L SiC Power MOSFET

Part Number:SCT4026DW7HRTL

Transistor Polarity:N-Channel

Vds - Drain-Source Breakdown Voltage:750 V
Integrated Circuit Chip NVBG020N090SC1 Single N-Channel Transistors D2PAK-7 28mOhm

Part Number:NVBG020N090SC1

Typical Turn-On Delay Time:39 ns

Transistor Type:1 N-Channel
Integrated Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3

Part Number:TW070J120B,S1Q

High voltage:VDSS = 1200 V

Gate-source voltage:+25V/-10V
Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V

Part Number:TW015N120C,S1F

Drive Voltage (Max Rds On, Min Rds On):18V

Gate Charge (Qg) (Max) @ Vgs:158 nC @ 18 V
Silicon Carbide MOS Transistors TW107N65C,S1F N-Channel TO-247-3 650V IC Chips

Part Number:TW107N65C,S1F

Qg - Gate Charge:28 nC

Vgs - Gate-Source Voltage:- 10 V, + 25 V
Integrated Circuit Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

Part Number:TW027N65C,S1F

Product Category:MOSFET

Number of Channels:1 Channel
Transistors SCTW100N65G2AG Automotive-Grade Silicon Carbide MOSFET 650V 100A 20mOhm

Part Number:SCTW100N65G2AG

FET Type:N-Channel

Technology:SiCFET (Silicon Carbide)
8-PowerVDFN SCTL90N65G2V MOSFET Silicon Carbide Power MOSFET 650V 18mOhm Typ 40 A

Part Number:SCTL90N65G2V

Technology:SiC

Transistor Polarity:N-Channel
Integrated Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors

Part Number:SCT30N120H

Technology:SiCFET (Silicon Carbide)

Drive Voltage:20V
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

Part Number:SCTWA50N120

Rds On - Drain-Source Resistance:52 mOhms

Vgs - Gate-Source Voltage:- 10 V, + 25 V
Integrated Circuit Chip TW060N120C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

Part Number:TW060N120C,S1F

Gate Charge (Qg) (Max) @ Vgs:46 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 800 V

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China Integrated Circuit Chip

H2PAK-7 Surface Mount SCTH90N65G2V-7 N-Channel Silicon Carbide Transistors

N-Channel Transistors SCT4026DW7HRTL Integrated Circuit Chip TO-263-7L SiC Power MOSFET

Integrated Circuit Chip NVBG020N090SC1 Single N-Channel Transistors D2PAK-7 28mOhm

Integrated Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3

Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V

Silicon Carbide MOS Transistors TW107N65C,S1F N-Channel TO-247-3 650V IC Chips

Integrated Circuit Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

Transistors SCTW100N65G2AG Automotive-Grade Silicon Carbide MOSFET 650V 100A 20mOhm

8-PowerVDFN SCTL90N65G2V MOSFET Silicon Carbide Power MOSFET 650V 18mOhm Typ 40 A

Integrated Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

Integrated Circuit Chip TW060N120C,S1F N-Channel Transistors TO-247-3 Silicon Carbide

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PEX8606-BA50BCG Ethernet IC 5.0GT/s 6-Lane 6-Port PCI Express Gen 2 Switch PBGA-196

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