Part Number:SCTW70N120G2V
Gate-Source Threshold Voltage:4.9 V
Qg - Gate Charge:150 nC
Part Number:SCT20N120AG
Rds On (Max) @ Id, Vgs:239mOhm @ 10A, 20V
Vgs (Max):+25V, -10V
Part Number:SCTW35N65G2VAG
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
Operating Temperature:-55°C ~ 200°C (TJ)
Part Number:TW083N65C,S1F
Product Category:MOSFET
Qg - Gate Charge:21 nC
Part Number:TW140N120C,S1F
Vds - Drain-Source Breakdown Voltage:1.2 kV
Mounting Style:Through Hole
Part Number:SCTH35N65G2V-7AG
Channel Mode:Enhancement
Configuration:Single
Part Number:SCTH35N65G2V-7
Vdss:650 V
Drive Voltage:18V, 20V
Part Number:SCTH40N120G2V-7
Operating Temperature:-55°C ~ 175°C (TJ)
Vgs th - Gate-Source Threshold Voltage:5 V
Part Number:SCT10N120AG
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 200 C
Part Number:TW030N120C,S1F
Input Capacitance (Ciss) (Max) @ Vds:2925 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 18 V
Part Number:TW015N65C,S1F
Technology:SiCFET (Silicon Carbide)
Input capacitance:4850pF
Part Number:TW048N65C,S1F
Vgs(th) (Max) @ Id:5V @ 1.6mA
Rise Time:43 ns