Part Number:NXH80T120L2Q0S2G
Gate-Emitter Leakage Current:300 nA
Pd - Power Dissipation:158 W
Part Number:NXH25T120L2Q1PG
Current - Collector (Ic) (Max):25 A
Configuration:Three Phase Inverter
Part Number:NXH80T120L2Q0S2TG
Minimum Operating Junction Temperature:-40°C
Turn−on Delay Time:61ns
Part Number:NXH40T120L3Q1PTG
Input Capacitance (Cies) @ Vce:7.753 nF @ 20 V
Input:Standard
Part Number:NXH400N100H4Q2F2PG
IGBT Type:Trench Field Stop
Configuration:Three Level Inverter
Part Number:FF450R12ME4
Voltage - Collector Emitter Breakdown:1200 V
Configuration:Half Bridge Inverter
Part Number:MSCSM120HM16CT3AG
Total gate charge:1602nC
Configuration:4 N-Channel
Part Number:MSCSM170HM23CT3AG
Power dissipation TC = 25 °C:602W(Max)
Drain-Source ON resistance(Max):22.5mΩ
Part Number:MSCSM120HM083CAG
VGS:10V
Power dissipation:1042W
Part Number:MSCSM120HM063CAG
Pulsed drain current:900A
Gate-source charge:232nC
Part Number:MSCSM170HM087CAG
Technology:Silicon Carbide (SiC)
Configuration:4 N-Channel (Full Bridge)
Part Number:MSCSM70HM038CAG
Maximum Operating Temperature:+ 125 C
Type:Full Bridge